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  february 2012 doc id 022454 rev 1 1/19 AN4006 application note designing a high-efficiency (60 w on 4 pairs) poe converter using the pm8803 and an external current booster introduction power over ethernet (poe) applications are covered by the ieee 802.3 working group with specifications released in 2003 (ieee 802.3af) and in 2009 (iee e 802.3at). power at the input of the powered device (pd) increased from 12.95 w (of the .af standard) to 25.5 w (made available by the .at standard). in both cases the power delivery was based on the ?2-pair? system, where 4 wires of the ethernet cable are used (tx, rx pairs or spare pairs). applications requiring more power are constantly emerging and some solutions are already on the market even though there is no stand ard fully supporting these applications yet. some of the alternatives are based on a 4-pair delivery system that allows doubling the power delivered along the ethernet cable with respect to a 2-pair system. this document focuses on a reference design fo r a high-efficiency, high-power pd (up to 60 w input) power converter based on an active-clamp forward topology with self-driven synchronous rectification using the pm8803 as the main controller. the total power is delivered on the 4 pairs of a single ethernet cable by a high-power injector. the pm8803 is a highly integrated device embedding an ieee 802.3at compliant powered device (pd) interfaced with a pwm contro ller and support for auxiliary sources. to manage the higher input current (up to 1.4 a) of high-power applications, a simple current booster is introduced in parallel to the pm8803 internal hot-swap mosfet. the proposed converter prototype is built from the pm8803 demonstration board, but several component changes have been introduced in order to manage the higher current on the input/output section of the converter. schematics of the poe converter are given in section 2 while the bill of ma terial is detailed in section 3 . in section 4 efficiency measurements together with main waveforms of the poe interface and power converter are shown. www.st.com
contents AN4006 2/19 doc id 022454 rev 1 contents 1 high-power poe converter electrical specific ations . . . . . . . . . . . . . . . 4 2 high-power converter schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 bill of material . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 test results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 efficiency measurements wi th synchronous rectification . . . . . . . . . . . . . 10 4.2 converter waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.2.1 startup sequence using powerdsine 9501g injector . . . . . . . . . . . . . . 12 4.2.2 primary-side mosfet . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.2.3 secondary-side mosfet . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.2.4 output ripple . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.2.5 g loop measurement and load transient response . . . . . . . . . . . . . . . . . 17 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
AN4006 list of figures doc id 022454 rev 1 3/19 list of figures figure 1. high-power converter schematic: detail of the input section including data transformers, bridges, protection and optional cm choke . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 figure 2. high-power converter: detail of the poe converter based on active-clamp forward topology with self-driven synchronous rectification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 figure 3. efficiency measurements at 48 v input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 figure 4. efficiency of the different circuits on the converter input stage. . . . . . . . . . . . . . . . . . . . . . 10 figure 5. booster current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 figure 6. booster power dissipation vs. input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 figure 7. startup with 0 a load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 8. startup with 10 a load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 9. primary-side power mosfet waveforms at 0 a load . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 10. primary-side power mosfet waveforms at 16 a load . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 figure 11. secondary-side power mosfet waveforms at 0 a load . . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 12. secondary-side power mosfet waveforms at 16 a load . . . . . . . . . . . . . . . . . . . . . . . . . 14 figure 13. output ripple measurement at 0 a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 figure 14. output ripple measurement at 16 a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 figure 15. output ripple measurement at 16 a with infinite persistance . . . . . . . . . . . . . . . . . . . . . . . 16 figure 16. control loop of the converter at 48 v input and 18 a output . . . . . . . . . . . . . . . . . . . . . . . . 17 figure 17. response of the converter to a 8 a - 16 a load transient . . . . . . . . . . . . . . . . . . . . . . . . . . 17
high-power poe converter electrical specifications AN4006 4/19 doc id 022454 rev 1 1 high-power poe converter electrical specifications table 1. specifications for 3.3 v output parameter description min typ max unit input voltage range applied at j3 connector 0 57 v operative input voltage 42 57 v uvlo vin rising edge 36 v vin falling edge 30 v auxiliary input voltage range 42 48 54 v output voltage (vout) vin= 42 v to 57 v, iout 0 to imax 3.25 3.35 3.45 v output current (iout) vin= 42 v to 57 v 0 18 a peak-to-peak output ripple 48vin, iout=imax 50 70 mvpp efficiency dc-dc only vin=48 v, iout=imax 91 % overall efficiency vin=48 v, iout=imax 88 % switching frequency 220 khz
AN4006 high-power converter schematic doc id 022454 rev 1 5/19 2 high-power converter schematic figure 1. high-power converter schematic: de tail of the input section including data transformers, bridges, protection and optional cm choke !-v /ption!ctive"ridge .ot-ounted )nput#ommon-ode&ilter !58 !uxiliaryinputfrontalor!58) /ption!ctive"ridge .ot-ounted 6   0/% & 633 6/54 #hassis #hassis #hassis #hassis #hassis #hassis 24. 24. # .-   # .-   1.- . ch6 3/ 1.- . ch6 3/         2 .-   2 .-   $.- ":8# 3/4 $.- ":8# 3/4    # n&   6 # n&   6 2 .-   2 .-   $ 3403(! 3-! $ 3403(! 3-! 2 .-  2 .-  2 2  2 2  $.- ":8# 3/4 $.- ":8# 3/4    # n&  +6 # n&  +6 $ 3403(! 3-! $ 3403(! 3-! # .-   +6 # .-   +6 2 .-  2 .-  2 +   2 +   # n &    6 # n &    6 2 .-  2 .-  $.- ":8# 3/4 $.- ":8# 3/4    $ 344(3 3-# $ 344(3 3-# # n &   6 # n &   6 $ .- 3-! $ .- 3-! # .-    6 # .-    6 2 .-  2 .-  # n&   6 # n&   6 2 2   2 2   # n &  6 # n &  6 2 .-   2 .-   1.- 0 ch6 3/ 1.- 0 ch6 3/         2 .-  2 .-  2 2   2 2   # n &  6 # n &  6 $.- ":8# 3/4 $.- ":8# 3/4    # n&   6 # n&   6 1.- 0 ch6 3/ 1.- 0 ch6 3/         # .-   6 # .-   6 1.- 0 ch6 3/ 1.- 0 ch6 3/         2 .-   2 .-   $ 3403(! 3-! $ 3403(! 3-! 2 .-   2 .-   * 30 * 30    2 &errite"eadohm!   2 &errite"eadohm!   # n&   6 # n&   6 2  2   2  2   2 .-  2 .-  2  2   2  2   $ 3403(! 3-! $ 3403(! 3-! 2 .-   2 .-   1.- . ch6 3/ 1.- . ch6 3/         * $!4!/54054 * $!4!/54054           # u& 6   # u& 6   $ 3403(! 3-! $ 3403(! 3-! 1.- 0 ch6 3/ 1.- 0 ch6 3/         2 2   2 2   2  2   2  2   $.- ":8# 3/4 $.- ":8# 3/4    $ 3403(! 3-! $ 3403(! 3-! 2 .-  2 .-  $.- ":8# 3/4 $.- ":8# 3/4    $.- ":8# 3/4 $.- ":8# 3/4    * $!4! 0/7%2).054 * $!4! 0/7%2).054           2 .-   2 .-   # n &   6 # n &   6 # n&    6 # n&    6 2 &errite"eadohm!  2 &errite"eadohm!  # .-   6 # .-   6 2 2  2 2  $ 3403(! 3-! $ 3403(! 3-! 2 &errite"eadohm!   2 &errite"eadohm!   # n&   6 # n&   6 2 .-  2 .-  # n &    6 # n &    6 4 %4( ,$ 4 %4( ,$                 2 &errite"eadohm!   2 &errite"eadohm!   1.- . ch6 3/ 1.- . ch6 3/         $ 3-!*! 3-! $ 3-!*! 3-! $ 3403(! 3-! $ 3403(! 3-! $.- ":8# 3/4 $.- ":8# 3/4    2 .-   2 .-   4.- 4.-     2 .-  2 .-  2 .-   2 .-   4 %4( ,$ 4 %4( ,$                 1.- . ch6 3/ 1.- . ch6 3/         # n &  6 # n &  6
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AN4006 bill of material doc id 022454 rev 1 7/19 3 bill of material the following table summarizes the bill of material for the high-power poe converter based on the pm8803, configured in active - clamp forward topology with self - driven synchronous rectification. table 2. bill of material reference description value tol voltage body vendor evalpm8803 fwd rev1 board pcb c1,c2,c3,c4, c11c42,c50, c57 ceramic capacitor 100 nf 50 v 603 std c5,c6,c7,c8 ceramic capacitor 10 nf 10% 100 v 603 tdk c10,c39,c41, c53c59 ceramic capacitor 1 f 20% 16 v 603 std c12 ceramic capacitor 2.2 nf 2 kv 1812 tdk c14,c16, c21 ceramic capacitor 1 nf 10% 100 v 603 tdk c18,c60 ceramic capacitor 47 nf 100 v 805 tdk c19,c38 ceramic capacitor 22 nf 50 v 603 std c23,c54 ceramic capacitor 470 pf 50 v 603 std c26 aluminium capacitor 33 f 20% 100 v 10x10.2 std low esr c27,c33,c37 ceramic capacitor 22 f 20% 6.3 v 805 std c28,c29,c30 ceramic capacitor 2.2 f 20% 100 v 1812 tdk c31,c37 ceramic capacitor 1 nf 10% 100 v 805 std c32 ceramic capacitor 100 nf 10% 100 v 805 tdk c33,c35 ceramic capacitor 10 f 6.3 v 805 tdk c34,c36 aluminium capacitor 330 f 6.3 v 8x10.2 std low esr c49, c56 ceramic capacitor 22 nf 50 v 603 std c51 ceramic capacitor 100 nf 200 v 1210 std c55 ceramic capacitor 100 pf 50 v 603 std c58 ceramic capacitor 1 nf 50 v 603 std c61 ceramic capacitor 2.2 nf 2 kv 1812 tdk d1, d21 std diode stth302s 200 v smc stmicroelectronics d32,d35 zener diode bzx84c10 sot23 std d4,d7,d8,d9, d12d13,d14, d17 schottky diode stps2h100a 100 v sma stmicroelectronics
bill of material AN4006 8/19 doc id 022454 rev 1 d11 tvs diode smaj58a sma stmicroelectronics d28,d30,d31, d33,d37,d38, d39,d40,d41, d43 schottky diode bat46j 100 v sod323 stmicroelectronics d20,d26,d44 led green led smd 2.2 v plcc-2 std j1,j2 power jack sa, sp std j3 rj45 connector data & power input std j4 rj45 connector data output std j5 terminal block 2 way mor-10x10.5-p5-2pin std l2 smt inductor 1 mh lps4018- 105ml coilcraft l3 smt inductor 2 h ser2011- 202mbl coilcraft l5 smt inductor 10 h mss7341- 103ml coilcraft q6 transistor, pnp mmbta92 300 v sot23 stmicroelectronics q10, q14 transistor, npn mmbt3904lt1 40 v sot23 std q11,q12,q13, q15 m o s f e t, n-channel irf8707 30 v so8 ir q17 m o s f e t, n-channel si4848dy 150 v so8 vishay q21 m o s f e t, p-channel irf6216pbf 150 v so8 nm q22 m o s f e t, n-channel sts4nf100 100 v so8 stmicroelectronics r1,r2,r5,r7 chip resistor 0 603 std r9 chip resistor 1 k 1% 603 std r10,r11,r12, r13 chip resistor 75 603 std r17,r26,r37, r43,r49,r54 ferrite bead mpz012101a 100 , 4 a 805 tdk r26,r37,r49, r54 chip resistor 0 805 std r19,r20,r22, r25r39,r40, r41,r42 chip resistor nm 603 nm r58,r72 chip resistor 124 k 1% 603 std r32,r51 chip resistor 47 k 805 std r38,r65 chip resistor 4.75 k 1% 603 std table 2. bill of material (continued) reference description value tol voltage body vendor
AN4006 bill of material doc id 022454 rev 1 9/19 r44,r52,r119 chip resistor 1 k 603 std r45 chip resistor 47 k 603 std r53,r59 chip resistor 10 805 std r57 chip resistor 5.6 805 std r60 chip resistor 2.2 805 std r62 chip resistor 200 603 std r64,r98 chip resistor 0 603 std r70 chip resistor 39 k 1% 603 std r106,r117 chip resistor 10 k 603 std r88 chip resistor 270 k 805 std r89 chip resistor 2.7 k 603 std r90 chip resistor 499 1% 603 std r91 chip resistor 10 603 std r92 chip resistor 1 603 std r93 chip resistor 820 1% 603 std r94 chip resistor 21 k 1% 603 std r95 chip resistor 24.9 k 1% 603 std r96 chip resistor 0 603 std r97 chip resistor 30.9 1% 603 std r102 chip resistor 35.7 1% 805 std r103 chip resistor 510 603 std r104 chip resistor 4.75 k 1% 603 std r107,r115,r1 21 chip resistor 100 k 603 std r108,r109 chip resistor 0.10 1206 std low value r111 chip resistor 12.4 k 1% 603 std r120 chip resistor 1 m 603 std t1,t2 poe+ magnetics eth1-230ld coilcraft t6 power transformer ma5509-al coilcraft u1 poe+ controller pm8803 ht ssop20 stmicroelectronics u2,u3,u7 smt optocoupler fairchild fod817as 4pdip fairchild u4 shunt regulator ts431ailt sot23-5 stmicroelectronics table 2. bill of material (continued) reference description value tol voltage body vendor
test results AN4006 10/19 doc id 022454 rev 1 4 test results 4.1 efficiency measurements wi th synchronous rectification figure 3. efficiency measurements at 48 v input the difference between dc-dc and overall measurements is about 3-4% from 10 a to 18 a. figure 4. efficiency of the different circuits on the converter input stage !-v                       dcdc hs overallpairswithdiodebridges diodeinputstage activebridgeinputstageestim overallpairswithactivebridgeestim %fficiency #urrent! !-v                      2* datatx diodebridge "oosteralone activebridge effsumdiodebridge effsumactivebridge %fficiency #urrent!
AN4006 test results doc id 022454 rev 1 11/19 figure 4 shows the various contributions to the tota l losses of the pd interface section of the converter: rj45 and data transformer value is small but not negligible at high input current/power booster value is negligible major contribution comes from the rectification bridge; an active bridge with mosfets for a total value of about 150 m per leg ( about 100 m for the p-channel mosfet and 50 m for the n-channel ) will assure a gain of about 1.6% on the total efficency over the full input current range. figure 5. booster current characteristics the external mosfet carries about 85% of the whole input current. the current ratio is inversely proportional to the ron of the mosfet used, in this case 65 m for the external mosfet while for the pm8803 internal hot-swap mosfet 400 m can be used , as confirmed by the estimations done. figure 6. booster power dissipation vs. input current the power dissipation of the mosfet booster is about 6 times higher than the internal hot - swap mosfet. am11001v1 05 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 1. 3 1.4 1.5 o u t [ a ] 0.0 0.1 0.2 0. 3 0.4 0 . 5 0.0 0.1 0.2 0. 3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 1. 3 1.4 1.5 i i in [ a ] i tot i b oo s ter i hot s w a p e s tim a ted i b oo s ter e s tim a ted ihot s w a p !-v                     0dissipated;7= )in;!= 0disstot 0dissbooster 0disshotswap
test results AN4006 12/19 doc id 022454 rev 1 4.2 converter waveforms 4.2.1 startup sequence using po werdsine 950 1g injector figure 7. startup with 0 a load figure 8. startup with 10 a load the current unbalance in the ethernet cable at steady state (between tx, rx and spare pairs) is minimum even at high load: see pink and blue traces. for details on the injector pl ease visit www.microsemi.com.
AN4006 test results doc id 022454 rev 1 13/19 4.2.2 primary-side mosfet figure 9. primary-side power mosfet waveforms at 0 a load figure 10. primary-side power mosfet waveforms at 16 a load
test results AN4006 14/19 doc id 022454 rev 1 4.2.3 secondary-side mosfet figure 11. secondary-side power mosfet waveforms at 0 a load figure 12. secondary-side power mosfet waveforms at 16 a load
AN4006 test results doc id 022454 rev 1 15/19 4.2.4 output ripple figure 13. output ripple measurement at 0 a figure 14. output ripple measurement at 16 a
test results AN4006 16/19 doc id 022454 rev 1 figure 15. output ripple measurement at 16 a with infinite persistance
AN4006 test results doc id 022454 rev 1 17/19 4.2.5 g loop measurement and lo ad transient response figure 16. control loop of the converter at 48 v input and 18 a output figure 17. response of the converter to a 8 a - 16 a load transient
revision history AN4006 18/19 doc id 022454 rev 1 5 revision history table 3. document revision history date revision changes 22-feb-2012 1 initial release
AN4006 doc id 022454 rev 1 19/19 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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